​Indigenous Development of Silicon Carbide Wafers

  • The Solid-State Physics Laboratory, a DRDO lab, has recently developed indigenous processes for manufacturing 4-inch Silicon Carbide (SiC) wafers and Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for X-band applications.
  • GaN/SiC technology enhances efficiency, reduces size and weight, and improves performance, making it crucial for next-gen defense, aerospace, and clean energy applications.
  • The technology supports future combat systems, RADAR, electronic warfare, communications, intelligence, reconnaissance, unmanned systems, and commercial sectors like electric vehicles and renewable energy.
  • Indigenous GaN on SiC-based MMICs have been successfully produced at GAETEC, Hyderabad, for strategic systems, space, aerospace, and 5G/satellite communications.
  • This development advances India’s self-reliance in semiconductor technology, ....
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