Gallium Nitride (GaN)

  • It is a very hard, mechanically stable wide band gap semiconductor. It has a Wurtzite crystal structure.
  • With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
  • Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).
  • Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for satellites.
  • It can play a key role in enabling e-vehicles and wireless communication.
  • Gallium Nitride Ecosystem Enabling Centre and Incubator (GEECI) facility is located ....
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