Gallium Nitride (GaN)

  • It is a very hard, mechanically stable wide band gap semiconductor. It has a Wurtzite crystal structure.
  • With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
  • Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si).
  • Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for satellites.
  • It can play a key role in enabling e-vehicles and wireless communication.
  • Gallium Nitride Ecosystem Enabling Centre and Incubator (GEECI) facility is located ....
Do You Want to Read More?
Subscribe Now

To get access to detailed content

Already a Member? Login here


Take Annual Subscription and get the following Advantage
The annual members of the Civil Services Chronicle can read the monthly content of the magazine as well as the Chronicle magazine archives.
Readers can study all the material before the last six months of the Civil Services Chronicle monthly issue in the form of Chronicle magazine archives.

Related Content